China's ChangXin Memory Technologies says its fifth-generation DRAM technology platform has entered mass production, alongside two 24Gb LPDDR5X products aimed at smartphones and other portable electronics.
CXMT is claiming a denser process platform
CXMT reports an 11.95-nanometer active-area half-pitch using self-aligned quadruple patterning, a 45:1 capacitor aspect ratio and a 6,762-nanometer core-cell-array height. Normalized to an 8Gb product baseline, the company says gross die per wafer improves by at least 50% over its fourth-generation platform.
The first announced products are mobile memory
The company says two 24Gb LPDDR5X devices are now in mass production, offering 50% more capacity per die than its prior equivalent. The announcement concerns mobile DRAM rather than high-bandwidth memory, so its AI relevance is principally the broader memory-supply and process-technology race.
Yield and output remain undisclosed
Reuters independently confirms the mass-production announcement. CXMT did not disclose independently audited yield, shipment volume or customer adoption, and its process and density metrics have not been independently reproduced.